CHDTA143TUPT chenmko enterprise co.,ltd surface mount pnp digital silicon transistor vo l t a ge 50 v o l t s current 100 m a m p e r e application feature * small surface mounting type. (sc-70/sot-323) * high current gain. * suitable for high packing density. construction * one pnp transistors and bias of thin-film resistors in one package. * switching circuit, inverter, interface circuit, driver circuit. 2005-06 * low colloector-emitter saturation. * high saturation current capability. * internal isolated pnp transistors in one package. * built in bias resistor(r1=4.7k w, typ. ) circuit limiting v alues in accordance with the absolute maxim um rating system (iec 60134). note 1. transistor mounted on an fr4 printed-circuit board. symbol parameter conditions value unit v cbo collector-base voltage -50 v -50 v junction - soldering point -5 i c(max.) collector current -100 ma p d p o w er d i ss i p a t i o n t a m b 25 o c, n ot e 1 200 m w t stg storage temperature -55 ~ + 150 o c t j r q j-s thermal resistance junction temperature o c 140 o c/w v ceo collector-emitter voltage v ebo emitter-base voltage -55 ~ + 150 v , n ot e 1 2 1 3 e b c tr r1 sc-70/sot-323 m a r k i n g tu1 d i m e n s i o n s i n m i l l i m e t e r s s c - 7 0 / s o t - 3 2 3 (1) (2) ( 3 ) 0 . 6 5 0 . 6 5 1 . 3 0 . 1 2 . 0 0 . 2 0 . 8~1.1 0 . 3 0 . 1 0 . 05~0.2 0 ~ 0 . 1 1 . 2 5 0 . 1 2 . 0~2.45 0 . 1 m i n .
chara cteristics t amb =2 5 c unless otherwise specited. not e 1.pulse test: tp 300us; d 0.02. sy mbol p arameter conditions min. ty p . max. unit bv cbo collector-base breakdown voltage i c = -50ua -50.0 i c = -1ma - - - v v i e = -50ua i cbo collector-base current v cb = -50v i ebo emitter-base current r 1 input resistor v eb = -4v h fe dc current gain i c = -1ma; v ce = -5.0v - -0.5 100 6.11 3.29 kw - 4.7 ua f t transition frequency i e =5ma, v ce = -10.0v f =100mhz = - - 250 mhz rating characteristic ( CHDTA143TUPT ) v v ce(sat) collector-emitter saturation voltage i c = -5ma; i b = -0.25ma bv ceo collector-emitter breakdown voltage bv ebo emitter-base breakdown voltage - -50.0 -5.0 - - - - -0.3 - -0.5 - ua 250 600 v
rating characteristic curves ( CHDTA143TUPT ) typical electrical characteristics -100u -1m -5m -10m -50m -100m 1k 500 200 100 50 20 10 5 2 1 -100 u -500 u -1m -5m -10m -50m -100m -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m collector current : i c (a) dc current gain : h fe fig.1 dc current gain vs. collector current collector saturation voltage : v ce(sat) (v) fig.2 collector-emitter saturation voltage vs. collector current collector current : i c (a) v ce -5v = -40 c o 25 c o ta = 100 c o 100 c 25 c -40 c o o o l c /l b 20 =
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